조명전기설비학회논문지 (Journal of the Korean Institute of Illuminating and Electrical Installation Engineers)

  • 제29권4호
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  • Pages.11-17
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  • 2015
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  • 1229-4691(pISSN)
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  • 2287-5034(eISSN)
한국조명전기설비학회 (The Korean Institute of IIIuminating and Electrical Installation Engineers)
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1550nm 레이저 다이오드를 이용한 바나듐 이산화물 박막 기반 2단자 평면형 소자에서의 양방향 전류 트리거링

Bidirectional Current Triggering in Two-Terminal Planar Device Based on Vanadium Dioxide Thin Film Using 1550nm Laser Diode

  • Lee, Yong Wook (Pukyong National University, School of Electrical Engineering)
  • 투고 : 2014.12.14
  • 심사 : 2015.01.27
  • 발행 : 2015.04.30
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초록

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

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참고문헌

  1. F. J. Morin, "Oxides which show a metal-insulator transition at the Neel temperature," Physical Review Letters, vol. 3, pp. 34-36, 1959. https://doi.org/10.1103/PhysRevLett.3.34
  2. E. Arcangeletti, L. Baldassarre, D. D. Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, "Evidence of a pressure-induced metallization process in monoclinic $VO_{2}$," Physical Review Letters, vol. 98, pp. 196406(1-4), 2007. https://doi.org/10.1103/PhysRevLett.98.196406
  3. A. Cavalleri, Cs. Toth, C. W. Siders, J. A. Squier, F. Raksi, P. Forget, and J. C. Kieffer, "Femtosecond structural dynamics in $VO_{2}$ during an ultrafast solid-solid phase transition," Physical Review Letters, vol. 87, pp. 237401(1-4), 2001. https://doi.org/10.1103/PhysRevLett.87.237401
  4. S. B. Wang, B. F. Xiong, S. B. Zhou, G. Huang, S. H. Chen, and X. J. Yi, "Preparation of 128 element of IR detector array based on vanadium oxide thin films obtained by ion beam sputtering," Sensors and Actuators A, vol. 117, pp. 110-114, 2005. https://doi.org/10.1016/j.sna.2004.06.005
  5. Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, "Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film," Applied Physics Letters, vol. 92, pp. 162903(1-3), 2008. https://doi.org/10.1063/1.2911745
  6. Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, "Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film," Optics Express, vol. 15, pp. 12108-12113, 2007. https://doi.org/10.1364/OE.15.012108
  7. B.-J. Kim, G. Seo, and Y. W. Lee, "Bidirectional laser triggering of planar device based on vanadium dioxide thin film," Optics Express, vol. 22, pp. 9016-9023, 2014. https://doi.org/10.1364/OE.22.009016
  8. H. Wang, X. Yi, S. Chen, and X. Fua, "Fabrication of vanadium oxide micro-optical switches," Sensors and Actuators A: Physical, vol. 122, pp. 108-112, 2005. https://doi.org/10.1016/j.sna.2005.03.063
  9. R. M. Briggs, I. M. Pryce, and H. A. Atwater, "Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition," Optics Express, vol. 18, pp. 11192-11201, 2010. https://doi.org/10.1364/OE.18.011192
  10. J. D. Ryckman, K. A. Hallman, R. E. Marvel, R. F. Haglund, and S. M. Weiss, "Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition," Optics Express, vol. 21, pp. 10753-10763, 2013. https://doi.org/10.1364/OE.21.010753
  11. P. A. Do, A. Hendaoui, E. Mortazy, M. Chaker, and A. Hache, "Vanadium dioxide spatial light modulator for applications beyond 1200nm," Optics Communications, vol. 288, pp. 23-26, 2013. https://doi.org/10.1016/j.optcom.2012.09.073
  12. B.-G. Chae, H.-T. Kim, S. J. Yun, Y. W. Lee, B.-J. Kim, D.-H. Youn, and K.-Y. Kang, "Highly oriented $VO_{2}$ thin films prepared by sol-gel deposition," Electrochemical Solid-State Letters, vol. 9, pp. C12-C14, 2006. https://doi.org/10.1149/1.2135430
  13. H. Wang, X. Yi, S. Chen, and X. Fua, "Fabrication of vanadium oxide micro-optical switches," Sensors and Actuators A: Physical, vol. 122, pp. 108-112, 2005. https://doi.org/10.1016/j.sna.2005.03.063
  14. G. Seo, B.-J. Kim, H.-T. Kim, and Y. W. Lee, "Thermally- or optically-biased memristive switching in two-terminal $VO_{2}$ devices," Current Applied Physics, vol. 14, pp. 1251-1256, 2014. https://doi.org/10.1016/j.cap.2014.06.015
  15. M. Soltani, M. Chaker, E. Haddad, and R. Kruzelesky, "1$\times$2 optical switch devices based on semiconductorto- metallic phase transition characteristics of $VO_{2}$ smart coatings," Measurement and Science Technology, vol. 17, pp. 1052-1056, 2006. https://doi.org/10.1088/0957-0233/17/5/S19
  16. G. Seo, B.-J. Kim, H.-T. Kim, and Y. W. Lee, "Photo-assisted electrical oscillation in two-terminal device based on vanadium dioxide thin film," Journal of Lightwave Technology, vol. 30, pp. 2718-2724, 2012. https://doi.org/10.1109/JLT.2012.2199466

피인용 문헌

  1. Bidirectional Current Triggering in Two-Terminal Planar Device Based on Highly Resistive Vanadium Dioxide Thin Film Using 966nm Near Infrared Laser vol.29, pp.11, 2015, https://doi.org/10.5207/JIEIE.2015.29.11.028
  2. Laser vol.30, pp.1, 2016, https://doi.org/10.5207/JIEIE.2016.30.1.001