Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Manufacturing SiNx Extreme Ultraviolet Pellicle with HF Wet Etching Process

HF 습식 식각을 이용한 극자외선 노광 기술용 SiNx

  • Kim, Ji Eun (Department of Convergence Nanoscience, Hanyang University) ;
  • Kim, Jung Hwan (Department of Materials Science and Engineering, Hanyang University) ;
  • Hong, Seongchul (Department of Materials Science and Engineering, Hanyang University) ;
  • Cho, HanKu (Institute of Nano Science and Technology, Hanyang University) ;
  • Ahn, Jinho (Department of Convergence Nanoscience, Hanyang University)
  • 김지은 (한양대학교 자연과학대학 나노융합과학과) ;
  • 김정환 (한양대학교 공과대학 신소재공학과) ;
  • 홍성철 (한양대학교 공과대학 신소재공학과) ;
  • 조한구 (한양대학교 나노과학기술연구소) ;
  • 안진호 (한양대학교 자연과학대학 나노융합과학과)
  • Received : 2015.08.18
  • Accepted : 2015.09.22
  • Published : 2015.09.30
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Abstract

In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

Keywords

References

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