Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Properties of IZTO Thin Films Deposited on PET Substrates with The SiO2 Buffer Layer

  • Park, Jong-Chan (Department of Electronic Engineering, Inha University) ;
  • Kang, Seong-Jun (Department of Electric and Semiconductor Engineering, Cheonnam University) ;
  • Chang, Dong-Hoon (Department of Information & Communication Engineering, Inha University) ;
  • Yoon, Yung-Sup (Department of Electronic Engineering, Inha University)
  • Received : 2014.11.05
  • Accepted : 2014.12.30
  • Published : 2015.01.31
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Abstract

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

Keywords

References

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