Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Analysis of Mechanism for Photovoltaic Properties and Bypass Diode of Crystalline Silicon and CuInxGa(1-x)Se2 Module in Partial Shading Effect

결정질 실리콘 및 CuInxGa(1-x)Se2 모듈의 부분음영에 따른 태양전지 특성 변화 및 바이패스 다이오드의 작동 메커니즘 분석

  • Lee, Ji Eun (Department of Material Science and Engineering, Korea University) ;
  • Bae, Soohyun (Department of Material Science and Engineering, Korea University) ;
  • Oh, Wonwook (Department of Material Science and Engineering, Korea University) ;
  • Kang, Yoonmook (KU-KIST GreenSchool, Graduate School of Energy and Environment, Korea University) ;
  • Kim, Donghwan (Department of Material Science and Engineering, Korea University) ;
  • Lee, Hae-Seok (Department of Material Science and Engineering, Korea University)
  • 이지은 (고려대학교 신소재공학부) ;
  • 배수현 (고려대학교 신소재공학부) ;
  • 오원욱 (고려대학교 신소재공학부) ;
  • 강윤묵 (고려대학교 그린스쿨(에너지환경정책기술대학원)) ;
  • 김동환 (고려대학교 신소재공학부) ;
  • 이해석 (고려대학교 신소재공학부)
  • Received : 2015.03.13
  • Accepted : 2015.04.14
  • Published : 2015.04.27
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Abstract

This paper presents the impact of partial shading on $CuIn_xGa_{(1-x)}Se_2(CIGS)$ photovoltaic(PV) modules with bypass diodes. When the CIGS PV modules were partially shaded, the modules were under conditions of partial reverse bias. We investigated the characterization of the bypass diode and solar cell properties of the CIGS PV modules when these was partially shaded, comparing the results with those for a crystalline silicon module. In crystalline silicon modules, the bypass diode was operated at a partial shade modules of 1.67 % shading. This protected the crystalline silicon module from hot spot damage. In CIGS thin film modules, on the other hand, the bypass diode was not operated before 20 % shading. This caused damage because of hotspots, which occurred as wormlike defects in the CIGS thin film module. Moreover, the bypass diode adapted to the CIGS thin film module was operated fully at 60% shading, while the CIGS thin film module was not operated under these conditions. It is known that the bypass diode adapted to the CIGS thin film module operated more slowly than that of the crystalline silicon module; this bypass diode also failed to protect the module from damage. This was because of the reverse saturation current of the CIGS thin film, $1.99{\times}10^{-5}A/cm^2$, which was higher than that of crystalline silicon, $8.11{\times}10^{-7}A/cm^2$.

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