Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
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Fabrication of Graphene p-n Junction Field Effect Transistors on Patterned Self-Assembled Monolayers/Substrate

  • Cho, Jumi (Department of Physics, Sungkyunkwan University) ;
  • Jung, Daesung (Department of Energy Science, Sungkyunkwan University) ;
  • Kim, Yooseok (Division of Material Science, Korea Basic Science Institute) ;
  • Song, Wooseok (Thin Film Materials Research Center, Korea Research Institute of Chemical Technology) ;
  • Adhikari, Prashanta Dhoj (Department of Physics, Sungkyunkwan University) ;
  • An, Ki-Seok (Thin Film Materials Research Center, Korea Research Institute of Chemical Technology) ;
  • Park, Chong-Yun (Department of Physics, Sungkyunkwan University)
  • Received : 2015.04.18
  • Accepted : 2015.05.28
  • Published : 2015.05.30
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Abstract

The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

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