Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characteristics on Silicon Oxynitride Stack Layer of ALD-Al2O3 Passivation Layer for c-Si Solar Cell

결정질 실리콘 태양전지 적용을 위한 ALD-Al2O3 패시베이션 막의 산화질화막 적층 특성

  • Cho, Kuk-Hyun (Graduate school of Energy Science and Technology, Chungnam National University) ;
  • Cho, Young Joon (Graduate school of Energy Science and Technology, Chungnam National University) ;
  • Chang, Hyo Sik (Graduate school of Energy Science and Technology, Chungnam National University)
  • 조국현 (충남대학교 에너지과학기술대학원) ;
  • 조영준 (충남대학교 에너지과학기술대학원) ;
  • 장효식 (충남대학교 에너지과학기술대학원)
  • Received : 2015.04.02
  • Accepted : 2015.05.07
  • Published : 2015.05.27
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Abstract

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.

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References

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