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The Korean Institute of Commucations and Information Sciences (한국통신학회)
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NAND Flash 메모리 저장 장치에서의 Error Control Code 응용

  • Published : 2015.05.29
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Abstract

NAND flash 메모리의 집적도를 높이기 위한 주요 기술로, 데이터가 저장되는 cell 자체의 크기를 줄여주는 미세 공정화와 cell 당 저장되는 정보량을 늘려주는 멀티-레벨(multi-level)화가 사용되고 있다. 이러한 기술의 적용은 NAND flash 메모리 자체의 오류를 증가시키게 되므로, NAND flash 메모리 기반 데이터 저장 장치의 신뢰성을 높은 수준으로 유지하기 위해서는 우수한 정정 능력을 갖는 ECC(error control code) 를 사용하는 것이 필수적이다. 본고에서는 NAND flash 메모리의 신뢰성 특성과 함께 NAND flash 메모리를 사용하는 데이터 저장 장치에서의 ECC의 응용에 대해서 살펴보고자 한다.

Keywords

References

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