Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Properties of IZTO Thin Films on Glass with Different Thickness of SiO2 Buffer Layer

  • Park, Jong-Chan (Department of Electronic Engineering, Inha University) ;
  • Kang, Seong-Jun (Department of Elcetrical and Semiconductor Engineering, Chonnam National University) ;
  • Yoon, Yung-Sup (Department of Electronic Engineering, Inha University)
  • Received : 2015.03.04
  • Accepted : 2015.05.06
  • Published : 2015.07.31
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Abstract

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

Keywords

References

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