Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
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Diamagnetic Shift of a InGaP-AlInGaP Semiconductor Single Quantum Well under Pulsed-magnetic Fields

  • Choi, B.K. (Department of Applied Physics and Institute of Nanosensor and Biotechnology, Dankook University) ;
  • Kim, Yongmin (Korea Institute of Science and Technology) ;
  • Song, J.D. (Department of Applied Physics and Institute of Nanosensor and Biotechnology, Dankook University)
  • Received : 2015.09.04
  • Accepted : 2015.09.22
  • Published : 2015.09.30
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Abstract

Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson-$Schr{\ddot{o}}dinger$ equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.

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References

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