DOI QR코드

DOI QR Code

나노임프린트 리소그래피 기술을 이용한 그래핀 나노리본 트랜지스터 제조 및 그래핀 전극을 활용한 실리콘 트랜지스터 응용

Facile Fabrication Process for Graphene Nanoribbon Using Nano-Imprint Lithography(NIL) and Application of Graphene Pattern on Flexible Substrate by Transfer Printing of Silicon Membrane

  • 엄성운 (부산대학교 인지메카트로닉스공학과) ;
  • 강석희 (부산대학교 인지메카트로닉스공학과) ;
  • 홍석원 (부산대학교 인지메카트로닉스공학과)
  • Eom, Seong Un (Department of Congno-Mechatronics Engineering, Pusan National University) ;
  • Kang, Seok Hee (Department of Congno-Mechatronics Engineering, Pusan National University) ;
  • Hong, Suck Won (Department of Congno-Mechatronics Engineering, Pusan National University)
  • 투고 : 2016.07.30
  • 심사 : 2016.10.18
  • 발행 : 2016.11.27

초록

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

키워드

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