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Rectifying and Nitrogen Monoxide Gas Sensing Properties of a Spin-Coated ZnO/CuO Heterojunction

스핀코팅법으로 제작한 산화아연/산화구리 이종접합의 정류 및 일산화질소 가스 감지 특성

  • Hwang, Hyeonjeong (Graduate School of Advanced Circuit Substrate Engineering, Chungnam National University) ;
  • Kim, Hyojin (Graduate School of Advanced Circuit Substrate Engineering, Chungnam National University)
  • 황현정 (충남대학교 차세대기판학과) ;
  • 김효진 (충남대학교 차세대기판학과)
  • Received : 2015.10.16
  • Accepted : 2016.01.08
  • Published : 2016.02.27

Abstract

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

Keywords

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