Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Crystal structure investigation of AlN crystal grown on 6H-SiC seed by a physical vapor transport method

6H-SiC 종자 결정을 사용하여 PVT법으로 성장된 AlN 결정 연구

  • Shin, Hee-Won (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Lee, Dong-Hoon (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Kim, Hwang-Ju (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Park, Mi-Seon (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Jang, Yeon-Suk (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Lee, Won-Jae (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Kim, Jung-Gon (Daegu Gyeongbuk Institute of Science & Technology) ;
  • Jeong, Seong-Min (Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Myung-Hyun (Korea Institute of Ceramic Engineering and Technology) ;
  • Seo, Won-Seon (Korea Institute of Ceramic Engineering and Technology)
  • Received : 2015.12.07
  • Accepted : 2016.01.04
  • Published : 2016.02.29
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Abstract

The effect of process parameters such as the growth pressure and temperature on the AlN crystal growth has been investigated. AlN crystal was grown onto 6H-SiC seed crystal using PVT (Physical Vapor Transport) method. Crystal properties and morphology of AlN crystal was changed with growth pressure and temperature. Raman analysis confirmed that AlN crystals with different orientation were successfully grown on SiC seed crystal.

본 연구에서는 AlN 결정 성장시 중요한 공정변수 중의 하나인 성장 압력과 온도 조건에 따라 다르게 성장되는 AlN 결정상의 결과에 대하여 고찰하였다. AlN 결정 성장은 6H-SiC 종자 결정을 사용하여 PVT(Physical Vapor Transport)법을 적용하여 성장시켰다. 성장 압력과 온도에 따라 AlN 결정의 특성이 변화하였고, Raman 분석을 통해 다양한 방향을 갖는 AlN 결정이 SiC 종자 결정 위에 성장되는 것을 확인하였다.

Keywords

References

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