The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
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The Calculation of the Energy Band Gaps of Zincblende InAs1-X NX on Temperature and Composition

온도 및 조성비 변화에 따른 질화물계 화합물 반도체 InAs1-X NX의 에너지 밴드갭 계산

  • Chung, Ho-Yong ;
  • Kim, Dae-Ik (School of Electrical, Electronic Communication, and Computer Engineering, Chonnam National University)
  • 정호용 (전남대학교 의공학과) ;
  • 김대익 (전남대학교 전기전자통신컴퓨터공학부)
  • Received : 2016.10.17
  • Accepted : 2016.12.24
  • Published : 2016.12.31
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Abstract

The energy band gaps and the bowing parameters of zincblende InAs1-xN are determined by using an empirical pseudopotential method(EPM) within the improved virtual crystal approximation(VCA), which includes the disorder effect. The direct-band-gap bowing parameter calculated by using the EPM is 4.1eV for InAs1-xNx ($0{\leq}x{\leq}0.05$). The dependences of the band gaps of N-dilute InAs1-xNx on the temperature and composition are calculated by modifying the band anti-crossing(BAC) model. The calculation results are consistent with experimental values, and the coupling parameter CMN of InAs1-xNx is found to be equal to 1.8 by fitting the EPM data.

본 연구에서는 무질서 효과가 고려된, 새로이 가정한 가상 결정 근사법 내의 Empirical Pseudopotential Method(EPM)를 사용하여 3원계 질화물계 화합물 반도체 InAs1-xNx의 휨 매개변수 및 에너지 밴드갭을 계산하였다. InAs1-xNx 조성비 구간($0{\leq}x{\leq}0.05$)에서 계산된 휨 매개변수는 4.1eV를 갖으며, 해당되는 에너지 밴드갭들이 급격히 감소하고 있음을 알 수 있었다. EPM에 의한 계산 결과를 온도와 조성비를 고려한 수정된 Band Anti-Crossing(BAC) 모델에 적용하여 질화물계 화합물 반도체 InAs1-xNx의 에너지 띠구조를 계산하였다. 또한 InAs1-xNx의 결합 상수 CMN=1.8 등을 결정할 수 있었으며, 계산결과는 실험치를 대체로 잘 설명할 수 있었다.

Keywords

References

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