Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characterization of ZTO Thin Films Transistor Deposited by On-axis Sputtering and Facing Target Sputtering(FTS)

On-axis 스퍼터링과 FTS 공정으로 증착한 ZTO 박막트랜지스터의 특성

  • Lee, Se-Hee (Department of Materials Science and Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University)
  • 이세희 (충남대학교 신소재공학과) ;
  • 윤순길 (충남대학교 신소재공학과)
  • Received : 2016.10.01
  • Accepted : 2016.10.30
  • Published : 2016.12.27
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Abstract

We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at $400^{\circ}C$. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of $12.91cm^2/V.s$, a low swing of 0.80 V/decade, $V_{th}$ of 5.78 V, and a high $I_{on/off}$ ratio of $2.52{\times}10^6$.

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References

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