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Influence of Ag Nano-buffer Layer Thickness on the Opto-electrical Properties of AZO/Ag Transparent Electrode Films

Ag 나노완충층 두께에 따른 AZO/Ag 투명전극의 전기광학적 특성 연구

  • Eom, Tae-Young (School of Materials Science and Engineering, University of Ulsan) ;
  • Song, Young-Hwan (School of Materials Science and Engineering, University of Ulsan) ;
  • Moon, Hyun-Joo (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Dae-Hyun (Poongsan Holdings) ;
  • Cho, Yun-Ju (Poongsan Holdings) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • 엄태영 (울산대학교 첨단소재공학부) ;
  • 송영환 (울산대학교 첨단소재공학부) ;
  • 문현주 (울산대학교 첨단소재공학부) ;
  • 김대현 ((주)풍산홀딩스 기술연구소) ;
  • 조윤주 ((주)풍산홀딩스 기술연구소) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2016.09.08
  • Accepted : 2016.09.29
  • Published : 2016.11.30

Abstract

Al doped ZnO (AZO) single layer and AZO/Ag bi-layered films were deposited on the glass substrates by radio frequency and direct current magnetron sputtering and then the effect of Ag buffer layer on the electrical and optical properties of the films was investigated. The thicknesses of AZO upper layer was kept as 100 nm, while Ag buffer layer was varied from 5 to 15 nm. The observed results mean that opto-electrical properties of the AZO films is influenced with Ag buffer layer and AZO film with 10 nm thick Ag buffer layer show the higher opto-electrical performance than that of the AZO single layer film prepared in this study.

Keywords

References

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