The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
권호 표지
DOI QR코드

DOI QR Code

Design of Two-Stage X-Band Power Amplifier Using GaN-HEMT

GaN-HEMT를 이용한 X-대역 이단 전력증폭기 설계

  • Lee, Wooseok (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Hwiseob (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Park, Seungkuk (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lim, Wonseob (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Han, Jaekyoung (Peopleworks Co., Ltd.) ;
  • Park, Kwanggun (Peopleworks Co., Ltd.) ;
  • Yang, Youngoo (School of Information and Communication Engineering, Sungkyunkwan University)
  • Received : 2015.09.25
  • Accepted : 2015.11.26
  • Published : 2016.01.31
Download PDF
⟨ Previous Next ⟩

Abstract

This paper presents an X-band two-stage power amplifier using GaN-HEMT. Two-stage structure was adopted to take its high gain and simple inter-stage matching network. Based on a 3D EM simulation, the bond-wire inductance and the parasitic capacitance were predicted. By reducing bond-wire inductance, Q of the matching network is decreased and the bandwidth is improved. The implemented two-stage PA shows a power gain of more than 16 dB, saturated output power of more than 42.5 dBm, and a efficiency of more than 35 % in frequency range of 8.1~8.5 GHz with an operating voltage of 40 V.

본 논문에서는 GaN-HEMT를 이용하여 X-대역에서 동작하는 이단으로 구성된 전력증폭기를 설계 및 제작하였다. 높은 전력 이득을 얻기 위해 간단한 구조의 중간 단 정합 네트워크를 통해 이단으로 구성하였다. 3D EM 시뮬레이션을 통하여 본드와이어 인덕턴스와 기생 캐패시턴스를 예측하였다. 본드와이어 인덕턴스를 줄임으로써 정합 네트워크의 Q(quality-factor)를 최소화하여 대역 특성을 향상시켰다. 제작된 전력증폭기는 40 V의 동작 전압을 인가하였으며, 8.1~8.5 GHz에서 16 dB 이상의 전력 이득, 42.5 dBm 이상의 출력 전력, 35 % 이상의 효율 특성을 나타냈다.

Keywords

References

  1. U. K. Mishra, P. Parikh, and Y. F. Wu, "AlGaN/ GaN HEMTs-an overview of device operation and applications", Proc. of IEEE, vol. 90. no. 6, pp. 1022-1031, Jun. 2002. https://doi.org/10.1109/JPROC.2002.1021567
  2. K. Kanto, A. Satomi, Y. Asahi, Y. Kashiwabara, K. Matsushita, and K. Takagi, "An X-band 250 W solid-state power amplifier using GaN power HEMTs", in Radio and Wireless Symp., pp. 77-80, Jan. 2008.
  3. M. Casto, M. Lampenfeld, J. Pencheng, P. Courtney, S. Behan, P. Daughenbaugh, and R. Worley, "100 W X-band GaN SSPA for medium power TWTA replacement", in Wireless and Microwave Technology Conf., pp. 1-4, Apr. 2011.
  4. E. Suijker, M. Sudow, M. Fagerlind., N. Rorsman, A, Hek, and F. Viiet, "GaN MMIC power amplifiers for S-band and X-band", in European Microw. Conf. 2008., pp. 297-300, Oct. 2008.
  5. Y. Yamashita, T. Nakata, T. Kumamoto, R. Suzuki, and M. Tanabe, "X-band GaN HEMT advanced power amplifier unit for compact active phased array antennas", ICCAS-SICE, pp. 3047-3050, Aug. 2009.
  6. K. Takagi, K. Masuda, Y. Kashiwabara, H. Sakurai, K. Matsushita, S. Takatsuka, H. Kawasaki, Y. Takada, and K. Tsuda, "X-band AlGaN/GaN HEMT with over 80 W output power", in IEEE CSIC Symp., pp. 265-268, Nov. 2006.
  7. Cree, GaN HEMT Die CGHV1J006D datasheet, Ver. 0.6, 2014 [Online]. Available: http://www.wolfspeed.com/RF
  8. Cree, GaN HEMT Die CGHV1J025D datasheet, Ver. 1.1, 2014 [Online]. Available: http://www.wolfspeed.com/RF
  9. J. Leckey, "A 25 W X-band GaN PA in SMT package", in European Microw. Conf. 2014, pp. 1341-1343, Oct. 2014.
  10. H. Jeong, H. Oh, A. Ahmed, and K. Yeom, "Design of X-band 40 W pulse-driven GaN HEMT power amplifier", in Asia-Pacific Microw. Conf. 2012, pp. 466-468, Dec. 2012.
  11. T. Yamamoto, E. Mitan, K. Inou, M. Nishi, and S. Sano, "A 9.5-10.5 GHz 60 W AlGaN/GaN HEMT for X-band high power application", in European Microw. Conf. 2007, pp.173-175, Oct. 2007.