Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Imaging Performance of the Dependence of EUV Pellicle Transmittance

EUV 펠리클 투과도에 따른 이미지 전사 특성 분석

  • 우동곤 (한양대학교 공과대학 신소재공학과) ;
  • 김정환 (한양대학교 공과대학 신소재공학과) ;
  • 김정식 (한양대학교 공과대학 나노반도체공학과) ;
  • 홍성철 (한양대학교 공과대학 신소재공학과) ;
  • 안진호 (한양대학교 공과대학 신소재공학과)
  • Received : 2016.08.24
  • Accepted : 2016.09.09
  • Published : 2016.09.30
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Abstract

Extreme Ultraviolet Lithography (EUVL) is the most promising technique in the field of Next Generation Lithography (NGL) expected to be used in the 1x-nm node for High Volume Manufacturing (HVM). But there exits remaining challenges for proper defect control of EUV mask. It was considered development of EUV pellicle for protecting the EUV mask has many obstacles due to high extinction coefficient of EUV wavelength. Recently researchers in the industry of semiconductor argue about the necessity of EUV pellicle and make effort to achieve it. In this paper, we investigated that the relationship between imaging performance and transmittance of EUV pellicle quantitatively. We made in-house EUV pellicle and analyzed its imaging performance of the dependence of pellicle transmittance using Coherent Scattering Microscopy(CSM). The imaging performance of EUV mask with pellicle is affected by its transmittance and we found that the performance of EUV mask improved with higher transmittance pellicle.

Keywords

References

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