Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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NiO-transparent Metal-oxide Semiconductor Photoelectric Devices

NiO 기반의 투명 금속 산화물 반도체 광전소자

  • Ban, Dong-Kyun (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University) ;
  • Park, Wang-Hee (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University) ;
  • Eun, Seong Wan (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University) ;
  • Kim, Joondong (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
  • 반동균 (인천대학교 전기공학과 광전에너지소자연구실) ;
  • 박왕희 (인천대학교 전기공학과 광전에너지소자연구실) ;
  • 은승완 (인천대학교 전기공학과 광전에너지소자연구실) ;
  • 김준동 (인천대학교 전기공학과 광전에너지소자연구실)
  • Received : 2016.04.07
  • Accepted : 2016.05.24
  • Published : 2016.06.01
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Abstract

NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.

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References

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