Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지
DOI QR코드

DOI QR Code

Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method

HVPE를 이용하여 r-plane 사파이어 위에 multi-step으로 성장시킨 a-plane GaN 에피층의 특성 연구

  • Lee, Won-Jun (Advanced Materials Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Park, Mi-Seon (Advanced Materials Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Jang, Yeon-Suk (Advanced Materials Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Lee, Won-Jae (Advanced Materials Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Ha, Ju-Hyung (LumiGNtech Co., Ltd.) ;
  • Choi, Young-Jun (LumiGNtech Co., Ltd.) ;
  • Lee, Hae-Yong (LumiGNtech Co., Ltd.) ;
  • Kim, Hong-Seung (Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University)
  • 이원준 (동의대학교 신소재공학과 전자세라믹센터) ;
  • 박미선 (동의대학교 신소재공학과 전자세라믹센터) ;
  • 장연숙 (동의대학교 신소재공학과 전자세라믹센터) ;
  • 이원재 (동의대학교 신소재공학과 전자세라믹센터) ;
  • 하주형 ((주)루미지엔테크) ;
  • 최영준 ((주)루미지엔테크) ;
  • 이혜용 ((주)루미지엔테크) ;
  • 김홍승 (한국해양대학교 전자전기정보공학부)
  • Received : 2016.04.11
  • Accepted : 2016.05.13
  • Published : 2016.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

본 연구에서는 HVPE(Hydride Vapor Phase Epitaxy)를 이용하여 각각 다른 V/III ratio를 가지는 multi-step의 성장 시간 변화에 따라 r-plane 사파이어 위에 성장되는 a-plane GaN 에피층의 결정성에 대하여 연구하였다. 또한 이번 연구의 결과를 선행 연구에서 single-step으로 r-plane 사파이어 위에 성장시킨 a-GaN 에피층의 결과와 비교하였다. Multi-step으로 r-plane 사파이어 위에 a-plane GaN 에피층을 성장시켰을 때, source HCl의 유량과 성장 시간이 증가함에 따라 a-plane GaN 에피층에 대한 rocking curve의 FWHM(Full Width at Half Maximum) 값이 감소하였다. 높은 source HCl의 유량을 갖는 first step과 second step의 성장 시간과 source HCl의 유량이 증가할수록 a-plane GaN 에피층 내부의 void가 감소하였다. 결과적으로 first step과 second step의 성장 시간이 가장 긴 조건에서 성장된 a-plane GaN 에피층이 가장 낮은 FWHM 값인 584 arcsec을 가지며, azimuth angle의 의존도가 가장 적은 것으로 확인되었다.

Keywords

References

  1. J.J. Jang, G.H. Yoo and O.H. Nam, "Current status of non-/semi-polar GaN based light emitting diodes", J. Photon. Sci. Technol. 1 (2011) 1.
  2. S. Nakamura, T. Mukai and M. Senoh, "High-power GaN P-N junction blue-light-emitting diodes", Jpn. J. Appl. Phys. 30 (1991) L1998. https://doi.org/10.1143/JJAP.30.L1998
  3. S. Nakamura, "InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates", Mater. Sci. Eng. B 59 (1999) 370. https://doi.org/10.1016/S0921-5107(98)00354-7
  4. D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Wood and C.A. Burrus, "Electric field dependence of optical absorption near the band gap of quantum-well structures", Phys. Rev. B 32 (1985) 1043. https://doi.org/10.1103/PhysRevB.32.1043
  5. P. Waltereit, O. Brandt, A. Trampert, H.Y. Grahn, J. Menniger, M. Ramsteiner, M. Reiche and K.H. Ploog, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes", Nature 406 (2000) 865. https://doi.org/10.1038/35022529
  6. J.-H. Ha, M.-S. Park, W.-J. Lee, Y.-J. Choi and H.-Y. Lee, "Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE", J. Korean Cryst. Growth Cryst. Technol. 24 (2014) 89. https://doi.org/10.6111/JKCGCT.2014.24.3.089
  7. F. Habel, P. Bruckner and F. Scholz, "Marker layers for the development of a multistep GaN FACELO process", J. Crystal Growth 272 (2004) 515. https://doi.org/10.1016/j.jcrysgro.2004.08.082
  8. J.-H. Ha, M.-S. Park, Y.-S. Jang, W.-J. Lee, Y.-J. Choi and H.-Y. Lee, "The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on rplane sapphire grown by HVPE", J. Korean Cryst. Growth Cryst. Technol. 25 (2015) 56. https://doi.org/10.6111/JKCGCT.2015.25.2.056
  9. J. Liu, X. Liu, C. Li, H. Wei, Y. Guo, C. Jiao, Z. Li, X. Xu, H. Song, S. Yang, Q. Zhu, Z. Wang, A. Yang, T. Yang and H. Wang, "Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method", Nanoscale Res. Lett. 6 (2011) 69. https://doi.org/10.1186/1556-276X-6-69
  10. C. Roder, S. Einfeldt, S. FIgge, T. Paskova, D. Hommel, P.P. Paskov, B. Monnemar, U. Behn, B.A. Haskell, P.T. FIni and S. Nakamura "Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates", J. Appl. Phys. 100 (2006) 103511. https://doi.org/10.1063/1.2386940
  11. Y.H. Wu, C.H. Lee, C.M. Chu, Y.H. Yeh, C.L. Chen and W.I. Lee, "A simple growth method to produce aplane GaN thick films by hydride vapor phase epitaxy", Jpn. J. Appl. Phys. 52 (2013) 08JB08. https://doi.org/10.7567/JJAP.52.08JB08
  12. H.M. Wang, C.Q. Chen, Z. Gong, J.P. Zhang and M. Gaevski, "Anisotropic structural characteristics of (110) GaN templates and coalesced epitaxial lateral overgrown films deposited on (102) sapphire", Appl. Phys. Lett. 84 (2004) 499. https://doi.org/10.1063/1.1644054
  13. J. Liu, X. Liu, C. Li, H. Wei, Y. Guo, C. Jiao, Z. Li, X. Xu, H. Song, S. Yang, Q. Zhu, Z. Wang, A. Yang, T. Yang and H. Wang, "Investigation of cracks in GaN films grown by combined hydride and metal organic vapor phase epitaxial method", Nanoscale Res. Lett. 6 (2011) 69. https://doi.org/10.1186/1556-276X-6-69
  14. T. Bottcher, S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel and J.S. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Appl. Phys. Lett. 78 (2001) 1976. https://doi.org/10.1063/1.1359780
  15. T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmitta and B. Monemar, "Nonpolar a-plane HVPE GaN growth and in-plane anisotropic properties", J. Crystal Growth 281 (2005) 55. https://doi.org/10.1016/j.jcrysgro.2005.03.013