The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Review: Comparison of Fabrication and Characteristics of Flexible ReRAM and Multi-Insulating Graphene Oxide Layer ReRAM

산화 그래핀을 절연층으로 사용한 유연한 ReRAM과 다층 절연층 ReRAM의 제작 방법 및 결과 비교

  • Kim, Dong-Kyun (Dept. of Electrical and Electronic Engineering, Korea University) ;
  • Kim, Taeheon (Dept. of Electrical and Electronic Engineering, Korea University) ;
  • Yoon, Taehwan (Dept. of Electrical and Electronic Engineering, Korea University) ;
  • Pak, James Jungho (Dept. of Electrical and Electronic Engineering, Korea University)
  • Received : 2016.02.05
  • Accepted : 2016.03.20
  • Published : 2016.08.01
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Abstract

A rapid progress of the next-generation non-volatile memory device has been made in recent years. Metal/insulator/Metal multi-layer structure resistive RAM(ReRAM) has attracted a great deal of attention because it has advantages of simple fabrication, low cost, low power consumption, and low operating voltage. This paper describes the working principle of the ReRAM device, a review of fabrication techniques, and characteristics of flexible ReRAM devices using graphene oxide as an insulating layer and ReRAM devices using multi-layered insulator. The switching characteristics of the above ReRAM devices have been compared. The oxidized graphene could be employed as an insulator of next generation ReRAM devices.

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References

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