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Use of a Transformed Diode Equation for Characterization of the Ideality Factor and Series Resistance of Crystalline Silicon Solar Cells Based on Light I-V Curves

Light I-V 곡선을 이용한 결정질 태양전지의 이상계수와 직렬 저항 특성 분석

  • Jeong, Sujeong (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Soo Min (Department of Materials Science and Engineering, Korea University) ;
  • Kang, Yoonmook (KU.KIST Green School, Graduate School of Energy and Environment, Korea University) ;
  • Lee, Hae-seok (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Donghwan (Department of Materials Science and Engineering, Korea University)
  • 정수정 (고려대학교 신소재공학과) ;
  • 김수민 (고려대학교 신소재공학과) ;
  • 강윤묵 (고려대학교 그린스쿨대학원(에너지환경정책기술학과)) ;
  • 이해석 (고려대학교 신소재공학과) ;
  • 김동환 (고려대학교 신소재공학과)
  • Received : 2016.02.24
  • Accepted : 2016.07.04
  • Published : 2016.08.27

Abstract

With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance ($R_s$) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance ($R_s$) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance ($R_s$) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance ($R_s$) based on the light I-V curves.

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References

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