The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Novel Hydrogen-reduced P-type Amorphous Silicon Oxide Buffer Layer for Highly Efficient Amorphous Silicon Thin Film Solar Cells

고효율 실리콘 박막태양전지를 위한 신규 수소저감형 비정질실리콘 산화막 버퍼층 개발

  • Kang, Dong-Won (Dept. of Solar & Energy Engineering, Cheongju Univerity)
  • Received : 2016.09.01
  • Accepted : 2016.09.22
  • Published : 2016.10.01
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Abstract

We propose a novel hydrogen-reduced p-type amorphous silicon oxide buffer layer between $TiO_2$ antireflection layer and p-type silicon window layer of silicon thin film solar cells. This new buffer layer can protect underlying the $TiO_2$ by suppressing hydrogen plasma, which could be made by excluding $H_2$ gas introduction during plasma deposition. Amorphous silicon oxide thin film solar cells with employing the new buffer layer exhibited better conversion efficiency (8.10 %) compared with the standard cell (7.88 %) without the buffer layer. This new buffer layer can be processed in the same p-chamber with in-situ mode before depositing main p-type amorphous silicon oxide window layer. Comparing with state-of-the-art buffer layer of AZO/p-nc-SiOx:H, our new buffer layer can be processed with cost-effective, much simple process based on similar device performances.

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References

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