The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of Precursor Concentration on the Growth of ZnO Nanorods

ZnO 나노로드 성장에 미치는 전구체 농도의 영향

  • Ma, Tae-Young (Dept. of Electrical Engineering & ERI, Gyeongsang National University)
  • Received : 2016.08.19
  • Accepted : 2016.10.17
  • Published : 2016.11.01
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Abstract

In this study, ZnO nanorods were grown by a hydrothermal method. $SiO_2/Si$ wafers and glass were used as substrates. ~20 nm-thick ZnO thin films were rf magnetron sputtered for seed layers. The precursor was prepared by mixing zinc nitrate hexahydrate and hexamethylenetetramine (hexamine) in DI water. The concentration of zinc nitrate hexahydrate was fixed at 0.05 mol, and that of hexamine was varied between 0 mol to 0.1 mol. The reactor containing substrates and precursor was put in an oven maintained at $90^{\circ}C$ for 1 h. X-ray diffraction was carried out to analyze the crystallinity of ZnO nanorods, and a field emission scanning electron microscope was employed to observe the morphology of nanorods. Transmittance and absorbance were measured by a UV-Vis spectrophotometer. Photoluminescence measurements were conducted using 266 nm light.

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References

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