Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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HVPE growth of Mg-doped AlN epilayers for high-performance power-semiconductor devices

고효율 파워 반도체 소자를 위한 Mg-doped AlN 에피층의 HVPE 성장

  • Bae, Sung Geun (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Jeon, Injun (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Yang, Min (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Yi, Sam Nyung (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Ahn, Hyung Soo (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Jeon, Hunsoo (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Kim, Kyoung Hwa (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Kim, Suck-Whan (Department of Physics, Andong National University)
  • 배숭근 (한국해양대학교 전자소재공학과) ;
  • 전인준 (한국해양대학교 전자소재공학과) ;
  • 양민 (한국해양대학교 전자소재공학과) ;
  • 이삼녕 (한국해양대학교 전자소재공학과) ;
  • 안형수 (한국해양대학교 전자소재공학과) ;
  • 전헌수 (한국해양대학교 전자소재공학과) ;
  • 김경화 (한국해양대학교 전자소재공학과) ;
  • 김석환 (안동대학교 물리학과)
  • Received : 2017.09.06
  • Accepted : 2017.11.13
  • Published : 2017.12.31
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Abstract

AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.

AlN는 넓은 밴드 갭 및 높은 열전도율로 인해 넓은 밴드 갭 및 고주파 전자 소자로 유망한 재료이다. AlN은 전력 반도체의 재료로서 더 큰 항복전압과 고전압에서의 더 작은 특성저항의 장점을 가지고 있다. 높은 전도도를 갖는 p형 AlN 에피층의 성장은 AlN 기반 응용 제품 제조에 중요하다. 본 논문에서는 Mg이 도핑된 AlN 에피층을 혼합 소스 HVPE에 의해 성장하였다. Al 및 Mg 혼합 금속은 Mg-doped AlN 에피 층의 성장을 위한 소스 물질로 사용하였다. AlN 내의 Mg 농도는 혼합 소스에서 Mg 첨가 질량의 양을 조절함으로써 제어되었다. 다양한 Mg 농도를 갖는 AlN 에피 층의 표면 형태 및 결정 구조는 FE-SEM 및 HR-XRD에 의해 조사하였다. Mg-doped AlN 에피 층의 XPS 스펙트럼으로 부터 혼합 소스 HVPE에 의해 Mg을 AlN 에피 층에 도핑할 수 있음을 증명하였다.

Keywords

References

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