Thermoelectric Seebeck and Peltier effects of single walled carbon nanotube quantum dot nanodevice

  • El-Demsisy, H.A. (Faculty of Engineering, Benha University) ;
  • Asham, M.D. (Faculty of Engineering, Benha University) ;
  • Louis, D.S. (Faculty of Engineering, Ain-Shams University) ;
  • Phillips, A.H. (Faculty of Engineering, Ain-Shams University)
  • Received : 2016.05.26
  • Accepted : 2016.10.06
  • Published : 2017.01.31


The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).


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