The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
권호 표지
DOI QR코드

DOI QR Code

ETRI 0.25μm GaN MMIC Process and X-Band Power Amplifier MMIC

ETRI 0.25μm GaN MMIC 공정 및 X-대역 전력증폭기 MMIC

  • Lee, Sang-Heung (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Kim, Seong-Il (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Ahn, Ho-Kyun (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Lee, Jong-Min (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Kang, Dong-Min (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Kim, Dong Yung (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Kim, Haecheon (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Min, Byoung-Gue (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Yoon, Hyung Sup (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Cho, Kyu Jun (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Jang, Yoo Jin (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute) ;
  • Lee, Ki Jun (Department of Electronics Engineering, Chungnam National University) ;
  • Lim, Jong-Won (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
  • 이상흥 (한국전자통신연구원 RF융합부품연구실) ;
  • 김성일 (한국전자통신연구원 RF융합부품연구실) ;
  • 안호균 (한국전자통신연구원 RF융합부품연구실) ;
  • 이종민 (한국전자통신연구원 RF융합부품연구실) ;
  • 강동민 (한국전자통신연구원 RF융합부품연구실) ;
  • 김동영 (한국전자통신연구원 RF융합부품연구실) ;
  • 김해천 (한국전자통신연구원 RF융합부품연구실) ;
  • 민병규 (한국전자통신연구원 RF융합부품연구실) ;
  • 윤형섭 (한국전자통신연구원 RF융합부품연구실) ;
  • 조규준 (한국전자통신연구원 RF융합부품연구실) ;
  • 장유진 (한국전자통신연구원 RF융합부품연구실) ;
  • 이기준 (충남대학교 전자공학과) ;
  • 임종원 (한국전자통신연구원 RF융합부품연구실)
  • Received : 2016.10.13
  • Accepted : 2016.12.29
  • Published : 2017.01.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.

본 논문에서는 한국전자통신연구원(ETRI)에서 구축한 $0.25{\mu}m$ GaN MMIC 공정 및 소자특성을 소개하고, 이를 이용한 X-대역 3 W GaN 전력증폭기 MMIC 설계 제작 결과를 논의한다. X-대역 동작에 적합한 GaN HEMT 소자를 선정하여 GaN 전력증폭기 MMIC를 1단으로 설계하고 제작하였으며, 이를 통하여 ETRI $0.25{\mu}m$ GaN MMIC 공정 및 특성을 평가하고 분석하였다. X-대역 GaN 전력증폭기 MMIC 제작 결과, 출력전력 3.5 W, 이득 10 dB 및 전력부가효율 35 % 특성을 얻었다.

Keywords

References

  1. U. K. Mishra, P. Parikh, and Y. F Wu, "AlgaN/GaN HEMTs-an overview of device operation and applications", Proceedings of the IEEE, vol. 90, no. 6, Jun. 2002.
  2. M. Thorsell, M. Fagerlind, K. Andersson, N. Billstrom, and N. Rorsman, "An X-band AlGaN/GaN MMIC receiver front-end", IEEE Microwave and Wireless Components Letters, vol. 20, no. 1, Jan. 2010.
  3. H. Shigematsu, Y. Inoue, A. Akasegawa, M. Yamada, S. Masuda, Y. Kamada, A. Yamada, M. Kanamura, T. Ohki, K. Makiyama, N. Okamoto, K. Imanishi, T. Kikkawa, K. Joshin, and N. Hara, "C-band 340-W and X-band 100-W GaN power amplifiers with over 50 % PAE", IEEE MTT-S Int. Microwave Symp. Dig., pp. 1265-1268, Jun. 2009.
  4. 최윤호, 노윤섭, 염인복, "GaN HPA MMIC 기술 동향", 한국전자파학회지, 25(2), pp. 73-78, 2014년 3월.
  5. 이상흥, 김성일, 민병규, 임종원, 권용환, 남은수, "차세대 GaN 고주파 고출력 전력증폭기 기술동향", 전자통신동향분석, 29(6), pp. 1-13, 2014년 12월. https://doi.org/10.22648/ETRI.2014.J.290601
  6. 김성일, 안호균, 이상흥, 강동민, 이종민, 민병규, 김해천, 윤형섭, 장유진, 신민정, 임종원, "X-밴드 응용분야를 위한 GaN HEMT 모델링", 대한전자공학회 하계종합학술대회논문집, pp. 251-254, 2016년 6월.
  7. 이상흥, 김성일, 안호균, 임종원, "SiC 기판 기반의 스파이럴 인덕터 모델링", 한국전자파학회 하계종합학술대회 논문집, 2(1), p. 418, 2014년 8월.
  8. 이상흥, 김성일, 안호균, 민병규, 이종민, 주철원, 임종원, "GaN 기반 MIM 커패시터 모델링", 한국전자파학회 종합학술발표회 논문집, 24(1), p. 131, 2014년 11월.
  9. J. Leckey, "A 25 W X-band GaN PA in SMT package", European Microwave Conference, vol. 44, pp. 1341-1343, Oct. 2014.
  10. A. Zai, D. Li, S. Schafer, and Z. Popovic, "High-efficiency X-band MMIC GaN power amplifiers with supply modulation", IEEE MTT-S Int. Microwave Symp. Dig., TU4B-4, Jun. 2014.
  11. V. Camarchia, J. Fang, G. Ghione, J. Rubio, M. Pirola, and R. Quaglia, "X-band wideband 5 W GaN MMIC power amplifier with large-signal gain equalization", Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, S5-3, Sep. 2012.