Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control

HVPE 법에서의 공정변수 조절에 의한 bulk GaN 단결정의 두께 최적화

  • Park, Jae Hwa (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Hee Ae (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Joo Hyung (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Park, Cheol Woo (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Jung Hun (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Kang, Hyo Sang (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Kang, Suk Hyun (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Bang, Sin Young (AMES Micron Co. LTD.) ;
  • Lee, Seong Kuk (UNIMO Photron) ;
  • Shim, Kwang Bo (Division of Advanced Materials Science and Engineering, Hanyang University)
  • Received : 2017.04.07
  • Accepted : 2017.04.19
  • Published : 2017.04.30
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Abstract

GaN single crystals were grown by controlling of various processing parameters such as growing temperature, V/III ratio and growing rate. We optimized thickness of bulk GaN single crystal by analyzing defect of surface and inside of the GaN single crystal for application to high brightness and power device. 2-inch bulk GaN single crystals were grown by HVPE (hydride vapor phase epitaxy) on sapphire and their thickness was 0.3~7.0 mm. Crystal structure of the grown bulk GaN was analyzed by XRD (X-ray diffraction). The surface characteristics of the grown bulk GaN were observed by OM (optical microscope) and SEM (scanning electron microscopy) with measuring EPD (etch pits density) of the GaN crystals.

다양한 성장온도, V/III 비율, 성장속도과 같은 공정변수의 조절을 통하여 GaN 단결정을 성장시키고, 그에 따른 표면 및 재료 내부의 결함분석을 통하여 고휘도 고출력의 소자적용을 위한 bulk GaN 단결정의 두께를 최적화하였다. 2인치 직경의 sapphire 기판 위에 HVPE(hydride vapor phase epitaxy) 공정변수들을 조절하여, 0.3~7.0 mm 두께의 GaN 결정을 성장시켰다. 성장된 GaN 단결정의 구조분석을 위하여 XRD 분석을 사용하였고, 공정변수의 변화에 따른 표면 특성은 광학 현미경을 이용하여 관찰하였다. 성장된 두께에 따른 결함밀도 분석을 위하여 화학습식 에칭하였고, 에칭된 표면을 SEM으로 관찰하였다.

Keywords

References

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