Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Study on the Nano Semiconductor Structure due to the Electrical Characteristics of Thin Films with Schottky Contacts

쇼키 접합을 갖는 박막의 전기적인 특성에 따른 나노반도체구조에 관한 연구

  • Oh, Teresa (Division of Semiconductor, Cheongju University)
  • Received : 2017.03.15
  • Accepted : 2017.03.24
  • Published : 2017.03.31
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Abstract

To research the electrical properties of ZnS thin films with various annealing conditions, ZnS was prepared by RF magnetron sputtering system and annealed in a vacuum for 10 minutes. All films were analyzed by the XRD, PL and I-V measurement system. The XRD pattern of ZnS film annealed at $100^{\circ}C$ was shifted to lower 2 theta because of the formation of a depletion region at the interface between a substrate and ZnS thin film, and the capacitance was abruptly increased. However, the pattern of XRD of ZnS film annealed at $100^{\circ}C$ with a Schottky contact was showed the amorphous structure, and the current-voltage characteristics were non-linearly observed by the Schottky contact.

Keywords

References

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