Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Influence of Electron Beam Irradiation on the Electrical and Optical Properties of InGaZnO Thin Film Transistor

InGaZnO 박막 트랜지스터의 전기 및 광학적 특성에 대한 전자빔 조사의 영향

  • Cho, In-Hwan (Neutron Utilization Research Division, Korea Atomic Energy Research Institute) ;
  • Park, Hai-Woong (Department of Energy Materials and Chemical Engineering, Korea University of Technology and Education) ;
  • Kim, Chan-Joong (Neutron Utilization Research Division, Korea Atomic Energy Research Institute) ;
  • Jun, Byung-Hyuk (Neutron Utilization Research Division, Korea Atomic Energy Research Institute)
  • 조인환 (한국원자력연구원 중성자응용연구부) ;
  • 박해웅 (한국기술교육대학교 에너지신소재화학공학부) ;
  • 김찬중 (한국원자력연구원 중성자응용연구부) ;
  • 전병혁 (한국원자력연구원 중성자응용연구부)
  • Received : 2017.03.01
  • Accepted : 2017.04.05
  • Published : 2017.06.27
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Abstract

The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to $1.5{\times}10^{16}electrons/cm^2$. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level($E_F$) of the sample irradiated with $1.5{\times}10^{16}electrons/cm^2$ was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration.

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