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Tracking Cold Blocks for Static Wear Leveling in FTL-based NAND Flash Memory

메모리에서 정적 마모도 평준화를 위한 콜드 블록 추적 기법

  • Received : 2017.05.15
  • Accepted : 2017.05.29
  • Published : 2017.06.30

Abstract

Due to the characteristics of low power, high durability and high density, NAND flash memory is being heavily used in various type of devices such as USB, SD card, smart phone and SSD. On the other hand, because of another characteristic of flash cell with the limited number of program/erase cycles, NAND flash memory has a short lifetime compared to other storage devices. To overcome the lifetime problem, many researches related to the wear leveling have been conducted. This paper presents a method called a TCB (Tracking Cold Blocks) using more reinforced constraint conditions when classifying cold blocks than previous works. TCB presented in this paper keeps a MCT (Migrated Cold block Table) to manage the enhanced classification process of cold blocks, with which unnecessary migrations of pages can be reduced much more. Through the experiments, we show that TCB reduces the overhead of wear leveling by about 30% and increases the lifetime up to about 60% compared to BET and BST.

Keywords

References

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