The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Radiation Hardness Evaluation of GaN-based Transistors by Particle-beam Irradiation

방사선빔 조사를 이용한 질화갈륨 기반 트랜지스터의 내방사선 특성 연구

  • Keum, Dongmin (Dept. of Electronics and Electrical Engineering, Hongik University) ;
  • Kim, Hyungtak (Dept. of Electronics and Electrical Engineering, Hongik University)
  • Received : 2017.04.21
  • Accepted : 2017.08.11
  • Published : 2017.09.01
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Abstract

In this work, we investigated radiation hardness of GaN-based transistors which are strong candidates for next-generation power electronics. Field effect transistors with three types of gate structures including metal Schottky gate, recessed gate, and p-AlGaN layer gate were fabricated on AlGaN/GaN heterostructure on Si substrate. The devices were irradiated with energetic protons and alpha-particles. The irradiated transistors exhibited the reduction of on-current and the shift of threshold voltage which were attributed to displacement damage by incident energetic particles at high fluence. However, FET operation was still maintained and leakage characteristics were not degraded, suggesting that GaN-based FETs possess high potential for radiation-hardened electronics.

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References

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