Applied Microscopy

  • 제47권3호
  • /
  • Pages.131-147
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  • 2017
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  • 2287-5123(pISSN)
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  • 2287-4445(eISSN)
한국현미경학회 (Korean Society of Microscopy)
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Electric Conduction Mechanisms Study within Zr Doped Mn3O4 Hausmannite Thin Films through an Oxidation Process in Air

  • Said, L. Ben (Unit of Physics of Semiconductor Devices, Faculty of Science of Tunis, Tunis El Manar University) ;
  • Boughalmi, R. (Unit of Physics of Semiconductor Devices, Faculty of Science of Tunis, Tunis El Manar University) ;
  • Inoubli, A. (Laboratory of Physics of Lamellar and Nanomaterial Materials, Hybrids (LPMLNMH), Faculty of Science of Bizerte, Carthage University) ;
  • Amlouk, M. (Unit of Physics of Semiconductor Devices, Faculty of Science of Tunis, Tunis El Manar University)
  • 투고 : 2017.09.08
  • 심사 : 2017.09.12
  • 발행 : 2017.09.30
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초록

In this work further optical and electrical investigations of pure and Zr doped $Mn_3O_4$ (from 0 up to 20 at.%) thin films as a function of frequency. First, the refractive index, the extinction coefficient and the dielectric constants in terms of Zr content are reached from transmittance and reflectance data. The dispersion of the refractive index is discussed by means of Cauchy model and Wemple and DiDomenico single oscillator models. By exploiting these results, it was possible to estimate the plasma pulse ${\omega}_p$, the relaxation time ${\tau}$ and the dielectric constant ${\varepsilon}_{\infty}$. Second, we have performed original ac and dc conductivity studies inspired from Jonscher model and Arrhenius law. These studies helped establishing significant correlation between temperature, activation energy and Zr content. From the spectroscopy impedance analysis, we investigated the frequency relaxation phenomenon and hopping mechanisms of such thin films. Moreover, a special emphasis has been putted on the effect of the oxidation in air of hausmannite thin films to form $Mn_2O_3$ ones at $350^{\circ}C$. This intrigue phenomenon which occurred at such temperature is discussed along with this electrical study. Finally, all results have been discussed in terms of the thermal activation energies which were determined with two methods for both undoped and Zr doped $Mn_3O_4$ thin films in two temperature ranges.

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