Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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Electrical Characteristics of Tunneling Field-effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs

  • Kim, Bo Gyeong (School of Electronics Engineering, Kyungpook National University) ;
  • Kwon, Ra Hee (School of Electronics Engineering, Kyungpook National University) ;
  • Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University) ;
  • Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University) ;
  • Jang, Young In (School of Electronics Engineering, Kyungpook National University) ;
  • Cho, Min Su (School of Electronics Engineering, Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electronics Engineering, Kyungpook National University) ;
  • Cho, Seongjae (Dept. of Electronic Engineering, Gachon University) ;
  • Kang, In Man (School of Electronics Engineering, Kyungpook National University)
  • Received : 2016.12.23
  • Accepted : 2017.06.13
  • Published : 2017.11.01
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Abstract

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current ($I_{on}$), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length ($L_G$) was scaled down. The proposed TFET with a $L_G$ of 5 nm operated with an $I_{on}$ of $1.3mA/{\mu}m$, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage ($V_{DS}$) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional $L_G$ of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

Keywords

References

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