ETRI Journal

  • 제39권1호
  • /
  • Pages.51-61
  • /
  • 2017
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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Systematic Approach for Design of Broadband, High Efficiency, High Power RF Amplifiers

  • Mohadeskasaei, Seyed Alireza (Department of Communication, School of Computer and Communication, University of Science and Technology Beijing) ;
  • An, Jianwei (Department of Communication, School of Computer and Communication, University of Science and Technology Beijing) ;
  • Chen, Yueyun (Department of Communication, School of Computer and Communication, University of Science and Technology Beijing) ;
  • Li, Zhi (Department of Communication, School of Computer and Communication, University of Science and Technology Beijing) ;
  • Abdullahi, Sani Umar (Department of Communication, School of Computer and Communication, University of Science and Technology Beijing) ;
  • Sun, Tie (Department of Communication, School of Computer and Communication, University of Science and Technology Beijing)
  • 투고 : 2016.07.28
  • 심사 : 2016.10.17
  • 발행 : 2017.02.01
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초록

This paper demonstrates a systematic approach for the design of broadband, high efficiency, high power, Class-AB RF amplifiers with high gain flatness. It is usually difficult to simultaneously achieve a high gain flatness and high efficiency in a broadband RF power amplifier, especially in a high power design. As a result, the use of a computer-aided simulation is most often the best way to achieve these goals; however, an appropriate initial value and a systematic approach are necessary for the simulation results to rapidly converge. These objectives can be accomplished with a minimum of trial and error through the following techniques. First, signal gain variations are reduced over a wide bandwidth using a proper pre-matching network. Then, the source and load impedances are satisfactorily obtained from small-signal and load-pull simulations, respectively. Finally, two high-order Chebyshev low-pass filters are employed to provide optimum input and output impedance matching networks over a bandwidth of 100 MHz-500 MHz. By using an EM simulation for the substrate, the simulation results were observed to be in close agreement with the measured results.

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참고문헌

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