Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Silicon Etching Process of NF3 Plasma with Residual Gas Analyzer and Optical Emission Spectroscopy in Intermediate Pressure

잔류가스분석기 및 발광 분광 분석법을 통한 중간압력의 NF3 플라즈마 실리콘 식각 공정

  • Kwon, Hee Tae (Kwangwoon University Dept. of Electrical and Biological Physics) ;
  • Kim, Woo Jae (Kwangwoon University Dept. of Electrical and Biological Physics) ;
  • Shin, Gi Won (Kwangwoon University Dept. of Electrical and Biological Physics) ;
  • Lee, Hwan Hee (Kwangwoon University Dept. of Electrical and Biological Physics) ;
  • Lee, Tae Hyun (Kwangwoon University Dept. of Electrical and Biological Physics) ;
  • Kwon, Gi-Chung (Kwangwoon University Dept. of Electrical and Biological Physics)
  • 권희태 (광운대학교 전자바이오물리학과) ;
  • 김우재 (광운대학교 전자바이오물리학과) ;
  • 신기원 (광운대학교 전자바이오물리학과) ;
  • 이환희 (광운대학교 전자바이오물리학과) ;
  • 이태현 (광운대학교 전자바이오물리학과) ;
  • 권기청 (광운대학교 전자바이오물리학과)
  • Received : 2018.12.17
  • Accepted : 2018.12.21
  • Published : 2018.12.31
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Abstract

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

Keywords

References

  1. Onno Gabriel, Simon Kirner, Michael Klick, Bernd Stannowski, and Rutger Schlatmann, "Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing," EPJ Photovoltaics, 5 (2014): 55202. https://doi.org/10.1051/epjpv/2013028
  2. R. C. Weast, "Handbook of Chemistry and Physics, 70th Ed," CRC press, Boca Raton, FL 1990.
  3. Global Warming Potentials of ODS Substitutes, U.S. Environmental Protection Agency, 2002.
  4. Ronald Hellriegel, Matthias Albert, Bernd Hintze, Hubert Winzig, J.W. Bartha, "Remote plasma etching of titanium nitride using $NF_3$/argon and chlorine mixtures for chamber clean applications," Microelectronic Engineering, 84(1), 37-41, (2007). https://doi.org/10.1016/j.mee.2006.08.002
  5. B. E. E. Kastenmeier, G. S. Oehrlein, John G. Langan and William R. Entley, "Gas utilization in remote plasma cleaning and stripping applications," Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 18(5), 2102-2107, (2000). https://doi.org/10.1116/1.1287442
  6. M. Konuma and E. Bauser, "Mass and energy analysis of gaseous species in $NF_3$ plasma during silicon reactive ion etching," Journal of Applied Physics, 74(1), 62-67, (1993). https://doi.org/10.1063/1.355250
  7. M. Konuma, F. Banhart, F. Phillipp and E. Bauser, "Damage-free reactive ion etching of silicon in $NF_3$ at low temperature," Materials Science and Engineering B, 4(1-4), 265-268, (1989). https://doi.org/10.1016/0921-5107(89)90254-7
  8. Blessing, James E., et al., "Recommended practice for process sampling for partial pressure analysis," Journal of Vacuum Science & Technology A, 25(1), 167-186, (2007). https://doi.org/10.1116/1.2364001
  9. Kazuhide Ino, Iwao Natori, Akihiro Ichikawa, Raymond N. Vrtis, and Tadahiro Ohmi, "Plasma enhanced in situ chamber cleaning evaluated by extracted-plasma-parameter analysis," IEEE Transactions on Semiconductor Manufacturing, 9(2), 230-240, (1996). https://doi.org/10.1109/66.492817
  10. Flamm, Daniel L., "Mechanisms of silicon etching in fluorine-and chlorine-containing plasmas," Pure and Applied Chemistry, 62(9), 1709-1720, (1990). https://doi.org/10.1351/pac199062091709