Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of Growth Methods of InAs Quntum Dots on Infrared Photodetector Properties

InAs 양자점 형성 방법이 양자점 적외선 소자 특성에 미치는 효과

  • Seo, Dong-Bum (Department of Materials Science & Engineering, Chungnam National University) ;
  • Hwang, Je-hwan (Division of Convergence Technology, Korea Research Institute of Standard Science) ;
  • Oh, Boram (Division of Convergence Technology, Korea Research Institute of Standard Science) ;
  • Noh, Sam Kyu (Division of Convergence Technology, Korea Research Institute of Standard Science) ;
  • Kim, Jun Oh (Division of Convergence Technology, Korea Research Institute of Standard Science) ;
  • Lee, Sang Jun (Division of Convergence Technology, Korea Research Institute of Standard Science) ;
  • Kim, Eui-Tae (Department of Materials Science & Engineering, Chungnam National University)
  • 서동범 (충남대학교 공과대학 신소재공학과) ;
  • 황제환 (한국표준과학연구원 융합물성측정센터) ;
  • 오보람 (한국표준과학연구원 융합물성측정센터) ;
  • 노삼규 (한국표준과학연구원 융합물성측정센터) ;
  • 김준오 (한국표준과학연구원 융합물성측정센터) ;
  • 이상준 (한국표준과학연구원 융합물성측정센터) ;
  • 김의태 (충남대학교 공과대학 신소재공학과)
  • Received : 2018.04.29
  • Accepted : 2018.10.16
  • Published : 2018.11.27
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Abstract

We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by $4{\times}[0.3ML/1nm\;In_{0.15}Ga_{0.85}As]$ deposition(SML QDs). The QD infrared photodetector(QDIP) structure of $n^+-n^-(QDs)-n^+$ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown with Si doping of $2{\times}10^{17}/cm^3$ and capped by an $In_{0.15}Ga_{0.85}As$ layer at $495^{\circ}C$. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(${\sim}9-14{\mu}m$) of the SML QDIP is longer than that (${\sim}6-12{\mu}m$) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted $Al_{0.08}Ga_{0.92}As$ layer.

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References

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