한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제28권1호
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  • Pages.9-13
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  • 2018
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
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HVPE로 성장시킨 bulk GaN의 두께에 따른 광학적 특성 변화

Variation of optical characteristics with the thickness of bulk GaN grown by HVPE

  • 이희애 (한양대학교 신소재공학과) ;
  • 박재화 (한양대학교 신소재공학과) ;
  • 이정훈 (한양대학교 신소재공학과) ;
  • 이주형 (한양대학교 신소재공학과) ;
  • 박철우 (한양대학교 신소재공학과) ;
  • 강효상 (한양대학교 신소재공학과) ;
  • 강석현 (한양대학교 신소재공학과) ;
  • 인준형 (한양대학교 신소재공학과) ;
  • 심광보 (한양대학교 신소재공학과)
  • Lee, Hee Ae (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Park, Jae Hwa (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Jung Hun (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Joo Hyung (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Park, Cheol Woo (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Kang, Hyo Sang (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Kang, Suk Hyun (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • In, Jun Hyeong (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Shim, Kwang Bo (Division of Advanced Materials Science and Engineering, Hanyang University)
  • 투고 : 2017.12.04
  • 심사 : 2018.01.04
  • 발행 : 2018.02.28
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초록

본 연구에서는 고휘도 고출력 광학소자 제조에 GaN 기판으로서의 적용가능 여부를 평가하고자 HVPE 법으로 성장된 bulk GaN 결정의 두께 증가에 따른 광학적 특성 변화를 분석하였다. HVPE를 이용하여 다양한 두께(0.4, 0.9, 1.5 mm 이상)의 2인치 GaN 기판을 제작한 뒤, 화학 습식 에칭, Raman, PL 등을 이용하여 기판의 결함밀도와 잔류응력 변화에 따른 광학적 특성을 분석하였다. 이를 통해 제작된 GaN 기판의 결정 두께와 광학적 특성과의 상관관계를 확인하였으며, 동종기판의 제작을 통한 고성능 광학소자로의 응용가능성을 확인하였다.

In this work, we investigated the variation of optical characteristics with the thickness of bulk GaN grown by hydride vapor phase epitaxy(HVPE) to evaluate applicability as GaN substrates in fabrication of high-brightness optical devices and high-power devices. We fabricated 2-inch GaN substrates by using HVPE method of various thickness (0.4, 0.9, 1.5 mm) and characterized the optical property with the variation of defect density and the residual stress using chemical wet etching, Raman spectroscopy and photoluminescence. As a result, we confirmed the correlation of optical properties with GaN crystal thickness and applicability of high performance optical devices via fabrication of homoepitaxial substrate.

키워드

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