한국기계가공학회지 (Journal of the Korean Society of Manufacturing Process Engineers)

  • 제17권6호
  • /
  • Pages.91-97
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  • 2018
  • /
  • 1598-6721(pISSN)
  • /
  • 2288-0771(eISSN)
한국기계가공학회 (The Korean Society of Manufacturing Process Engineers)
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Cu CMP에서 온도가 재료 제거율에 미치는 영향

Effects of Temperature on Removal Rate in Cu CMP

  • 박인호 (부산대학교 대학원 기계공학과 정밀가공시스템) ;
  • 이다솔 (부산대학교 대학원 기계공학과 정밀가공시스템) ;
  • 정선호 (부산대학교 대학원 기계공학과 정밀가공시스템) ;
  • 정해도 (부산대학교 대학원 기계공학과 정밀가공시스템)
  • 투고 : 2018.07.16
  • 심사 : 2018.11.11
  • 발행 : 2018.12.31
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초록

Chemical mechanical polishing(CMP) realizes a surface planarity through combined mechanical and chemical means. In CMP process, Preston equation is known as one of the most general approximation of the removal rate. Effects of pressure and relative speed on the mechanical property of Cu CMP has been investigated. On the other hand, The amount of abrasion also increased with changes in pressure and speed, resulting in a proportional increase of temperature during CMP. Especially this temperature is an important factor to change chemical reaction in a Cu CMP. However, when the slurry temperature became higher than $70^{\circ}C$, the removal rate went lower due to abrasives aggregation and scratching occurred on the Cu film. Therefore, it was found that the slurry temperature should not exceed $70^{\circ}C$ during Cu CMP. Finally, authors could increase the pressure, speed and slurry temperature up to a ceratin level to improve the removal rate without surface defects.

키워드

참고문헌

  1. Kim H. J., "A Study on the Interfacial Characteristics and Its Effect on Material Removal in CMP," A Thesis for a Doctorate, Pusan National University, 2003
  2. Lee, H. S., "The Effect of Slurry Components on Cu CMP Performance," A Master's Thesis, Pusan National University, 2006.
  3. Cooper, K., Cooper, J., Groschopf, J., Flake, J., Solomentsev, Y., Farkas, J., "Effects of Particle Concentration on Chemical Mechanical Planarization, Electrochemical and Solid-State Letters," Electrochemical and solid state letters, Vol. 5, No. 12, pp. G109-G112, 2002. https://doi.org/10.1149/1.1517772
  4. Chiou, H. W., Lin, Z. H., Kuo, L. H., Shih, S.Y., Chen, L. J., Hsia, C., "Thermal impact and process Diagnosis of Copper Chemical Mechanical Polish," IEEE 99, IITC99-89-IITC99-85, 1999.1.
  5. Jung, S. K. and Lee, S. H., A Guide of shot peening Processing, Se Hwa Pub, pp. 6-12, 2001.

피인용 문헌

  1. 산화막 CMP에서 리테이닝 링의 인서트 재질이 연마정밀도에 미치는 영향 vol.18, pp.8, 2018, https://doi.org/10.14775/ksmpe.2019.18.8.044
  2. A Study on the Influence of the Cross-Sectional Shape of the Metal-Inserted Retainer Ring and the Pressure Distribution from the Multi-Zone Carrier Head to Increase the Wafer Yield vol.10, pp.23, 2018, https://doi.org/10.3390/app10238362