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ZnO Based All Transparent UV Photodetector with Functional SnO2 Layer

SnO2 기능성 박막을 이용한 ZnO 기반의 투명 UV 광검출기

  • Lee, Gyeong-Nam (Department of Electrical Engineering, Incheon National University) ;
  • Lee, Joo-Hyun (Department of Electrical Engineering, Incheon National University) ;
  • Kim, Joondong (Department of Electrical Engineering, Incheon National University)
  • Received : 2017.06.01
  • Accepted : 2017.11.11
  • Published : 2018.01.01

Abstract

All transparent UV photodetector based on ZnO was fabricated with structure of NiO/ZnO/$SnO_2$/ITO by using RF and DC magnetron sputtering system. ZnO was deposited with 4 inch ZnO target (purity 99.99%) for a quality film. In order to build p-n junction up, p-type NiO was formed on n-type ZnO by using reactive sputtering method. The indium tin oxide (ITO) which is transparent conducting oxide (TCO) was applied as a transparent electrode for transporting electrons. To improve the UV photodetector performance, a functional $SnO_2$ layer was selected as an electron transporting and hole blocking layer, which actively controls the carrier movement, between ZnO and ITO. The photodetector (NiO/ZnO/$SnO_2$/ITO) shows transmittance over 50% as similar as the transmittance of a general device (NiO/ZnO/ITO) due to the high transmittance of $SnO_2$ for broad wavelengths. The functional $SnO_2$ layer for band alignment effectively enhances the photo-current to be $15{\mu}A{\cdot}cm^{-2}$ (from $7{\mu}A{\cdot}cm^{-2}$ of without $SnO_2$) with the quick photo-responses of rise time (0.83 ms) and fall time (15.14 ms). We demonstrated the all transparent UV photodetector based on ZnO and suggest the route for effective designs to enhance performance for transparent photoelectric applications.

Keywords

References

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