Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Element Analysis related to Mobility and Stability of ZTO Thin Film using the CO2 Gases

이산화탄소를 이용한 ZTO 박막의 이동도와 안정성분석

  • Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
  • Received : 2018.04.19
  • Accepted : 2018.11.30
  • Published : 2018.12.27
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Abstract

The transfer characteristics of zinc tin oxide(ZTO) on silicon dioxide($SiO_2$) thin film transistor generally depend on the electrical properties of gate insulators. $SiO_2$ thin films are prepared with argon gas flow rates of 25 sccm and 30 sccm. The rate of ionization of $SiO_2$(25 sccm) decreases more than that of $SiO_2$(30 sccm), and then the generation of electrons decreases and the conductivity of $SiO_2$(25 sccm) is low. Relatively, the conductivity of $SiO_2$(30 sccm) increases because of the high rate of ionization of argon gases. Therefore, the insulating performance of $SiO_2$(25 sccm) is superior to that of $SiO_2$(30 sccm) because of the high potential barrier of $SiO_2$(25 sccm). The $ZTO/SiO_2$ transistors are prepared to research the $CO_2$ gas sensitivity. The stability of the transistor of $ZTO/SiO_2$(25 sccm) as a high insulator is superior owing to the high potential barrier. It is confirmed that the electrical properties of the insulator in transistor devices is an important factor to detect gases.

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References

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