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Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films

  • Ko, Da-Yeong (Department of Materials Science and Engineering, Hongik University) ;
  • Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University)
  • Received : 2018.11.28
  • Accepted : 2018.12.20
  • Published : 2018.12.31

Abstract

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

Keywords

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Fig. 1. Schematic diagrams illustrating the constitution of a JIC specimen used in this work.

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Fig. 2. Small-sized (20 mm × 20 mm) JIC crystallized samples on the 2nd generation glass substrate.

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Fig. 3. Raman spectra of JIC poly-Si produced under different processing conditions. (a) 600 V/cm for 15 μs (b) 700 V/ cm for 15 μs, (c) 750 V/cm for 15 μs.

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Fig. 4. In-situ, real-time measurement of voltages and currents for a pulsed electric input of 1050 V and 18 μs.

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Fig. 5. Bright-field TEM micrograph of the JIC poly-Si produced under different processing conditions. (a) 600 V/cm for 15 μs (b) 700 V/cm for 15 μs, (c) 750 V/cm for 15 μs.

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Fig. 6. JIC sample (a) before applying an electric field, and (b) after applying an electric field using the 2nd generation glass substrate. After applying an electric field the complete crystallization on the whole substrate area was successfully accomplished.

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