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High-Mobility Ambipolar Polymer Semiconductors by Incorporation of Ionic Additives for Organic Field-Effect Transistors and Printed Electronic Circuits

이온성 첨가제 도입을 통한 고이동도 고분자 반도체 특성 구현과 유기전계효과트랜지스터 및 유연전자회로 응용 연구

  • Lee, Dong-Hyeon (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Moon, Ji-Hoon (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Park, Jun-Gu (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Jung, Ji Yun (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Cho, Il-Young (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Kim, Dong Eun (Department of Graphic Arts Information Engineering, Pukyong National University) ;
  • Baeg, Kang-Jun (Department of Graphic Arts Information Engineering, Pukyong National University)
  • 이동현 (부경대학교 인쇄정보공학과) ;
  • 문지훈 (부경대학교 인쇄정보공학과) ;
  • 박준구 (부경대학교 인쇄정보공학과) ;
  • 정지윤 (부경대학교 인쇄정보공학과) ;
  • 조일영 (부경대학교 인쇄정보공학과) ;
  • 김동은 (부경대학교 인쇄정보공학과) ;
  • 백강준 (부경대학교 인쇄정보공학과)
  • Received : 2018.01.16
  • Accepted : 2018.01.22
  • Published : 2018.03.01

Abstract

Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.

Keywords

References

  1. Y. Guo, G. Yu, and Y. Liu, Adv. Mater., 22, 4427 (2010). [DOI: https://doi.org/10.1002/adma.201000740]
  2. J. Zaumseil and H. Sirringhaus, Chem. Rev., 107, 1296 (2007). [DOI: https://doi.org/10.1021/cr0501543]
  3. K. J. Baeg, M. Caironi, and Y. Y. Noh, Adv. Mater., 25, 4210 (2013). [DOI: https://doi.org/10.1002/adma.201205361]
  4. Y. Zhao, Y. Guo, and Y. Liu, Adv. Mater., 25, 5372 (2013). [DOI: https://doi.org/10.1002/adma.201302315]
  5. I. E. Jacobs and A. J. Moule, Adv. Mater., 29, 1703063 (2017). [DOI: https://doi.org/10.1002/adma.201703063]
  6. M. Kang, J. S. Yeo, W. T. Park, N. K. Kim, D. H. Lim, H. Hwang, K. J. Baeg, Y. Y. Noh, and D. Y. Kim, Adv. Funct. Mater., 26, 8527 (2016). [DOI: https://doi.org/10.1002/adfm.201603617]
  7. A. Facchetti, Chem. Mater., 23, 733 (2011). [DOI: https://doi.org/10.1021/cm102419z]
  8. L. L. Chua, J. Zaumseil, J. F. Chang, E.C.W. Ou, P.K.H. Ho, H. Sirringhaus, and R. H. Friend, Nature, 434, 194 (2005). [DOI: https://doi.org/10.1038/nature03376]
  9. H. Luo, C. Yu, Z. Liu, G. Zhang, H. Geng, Y. Yi, K. Broch, Y. Hu, A. Sadhanala, L. Jiang, P. Qi, Z. Cai, H. Sirringhaus, and D. Zhang, Sci. Adv., 2, e1600076 (2016). [DOI: https://doi.org/10.1126/sciadv.1600076]