Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Epitaxial Growth of Three-Dimensional ZnO and GaN Light Emitting Crystals

  • Yang, Dong Won (Division of Materials Science and Engineering, Hanyang University) ;
  • Park, Won Il (Division of Materials Science and Engineering, Hanyang University)
  • Received : 2018.02.28
  • Accepted : 2018.03.06
  • Published : 2018.03.31
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Abstract

The increasing demands for three-dimensional (3D) electronic and optoelectronic devices have triggered interest in epitaxial growth of 3D semiconductor materials. However, most of the epitaxially-grown nano- and micro-structures available so far are limited to certain forms of crystal arrays, and the level of control is still very low. In this review, we describe our latest progress in 3D epitaxy of oxide and nitride semiconductor crystals. This paper covers issues ranging from (i) low-temperature solution-phase synthesis of a well-regulated array of ZnO single crystals to (ii) systematic control of the axial and lateral growth rate correlated to the diameter and interspacing of nanocrystals, as well as the concentration of additional ion additives. In addition, the critical aspects in the heteroepitaxial growth of GaN and InGaN multilayers on these ZnO nanocrystal templates are discussed to address its application to a 3D light emitting diode array.

Keywords

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