Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Direct Growth of Graphene at Low Temperature for Future Device Applications

  • Kim, Bum Jun (SKKU of Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University) ;
  • Nasir, Tuqeer (SKKU of Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University) ;
  • Choi, Jae-Young (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
  • Received : 2018.04.02
  • Accepted : 2018.05.14
  • Published : 2018.05.31
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Abstract

The development of two-dimensional graphene layers has recently attracted considerable attention because of its tremendous application in various research fields. Semi-metal materials have received significant attention because of their excellent biocompatibility as well as distinct physical, chemical, and mechanical properties. Taking into account the technical importance of graphene in various fields, such as complementary metal-oxide-semiconductor technology, energy-harvesting and -storage devices, biotechnology, electronics, light-emitting diodes, and wearable and flexible applications, it is considered to be a multifunctional component. In this regard, material scientists and researchers have primarily focused on two typical problems: i) direct growth and ii) low-temperature growth of graphene. In this review, we have considered only cold growth of graphene. The review is divided into five sections. Sections 1 and 2 explain the typical characteristics of graphene with a short history and the growth methods adopted, respectively. Graphene's direct growth at low temperatures on a required substrate with a well-established application is then precisely discussed in Sections 3 and 4. Finally, a summary of the review along with future challenges is described in Section 5.

Keywords

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