DOI QR코드

DOI QR Code

Effect of Argon Addition on Properties of the Boron-Doped Diamond Electrode

아르곤 가스의 주입이 붕소 도핑 다이아몬드 전극의 특성에 미치는 효과

  • Choi, Yong-Sun (Dept. of Information & Electronics Engineering, Uiduk University) ;
  • Lee, Young-Ki (Division of Green Energy Engineering, Uiduk University) ;
  • Kim, Jung-Yuel (Division of Green Energy Engineering, Uiduk University) ;
  • Lee, You-Kee (Division of Green Energy Engineering, Uiduk University)
  • 최용선 (위덕대학교 일반대학원 정보전자공학과) ;
  • 이영기 (위덕대학교 그린에너지공학부) ;
  • 김정열 (위덕대학교 그린에너지공학부) ;
  • 이유기 (위덕대학교 그린에너지공학부)
  • Received : 2018.04.02
  • Accepted : 2018.04.26
  • Published : 2018.05.27

Abstract

A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of $H_2$, $CH_4$ and trimethylboron (TMB, 0.1 % $C_3H_9B$ in $H_2$) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different $Ar/CH_4$ ratios ($Ar/CH_4$ = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing $Ar/CH_4$ ratios. On the other hand, the samples with an $Ar/CH_4$ ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different $Ar/CH_4$ ratios result in the most inclined to (111) preferential growth when the $Ar/CH_4$ ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

Keywords

References

  1. A. Kraft, Int. J. Electrochem. Sci., 2, 355 (2007).
  2. T. A. Enache, A. M. Chiorcea-Paquim, O. Fatibello-Filho, and A. M. Oliveira-Brett, Electrochem. Commun., 11, 1342 (2009). https://doi.org/10.1016/j.elecom.2009.04.017
  3. A. Anglada, A. Urtiaga, and I. Ortiz, J. Chem. Tech. Biotechnol., 84, 1747 (2009). https://doi.org/10.1002/jctb.2214
  4. I. Jum’h, M. Al-Addous, H. Al-Taani, M. S. Abd El- Sadek, and N. Ayoub, Dig. J. Nanomater. Bios., 12, 589 (2017).
  5. J. Zhang, X. Wang, B. Shen, and F. Sun, Trans. Non- ferrous Met. Soc. China, 24, 3181 (2014). https://doi.org/10.1016/S1003-6326(14)63458-0
  6. J. A. Bennett, J. Wang, Y. Show, and G. M. Swain, J. Electrochem. Soc., 151, E306 (2004). https://doi.org/10.1149/1.1780111
  7. L. Lin, J. Wang, J. Weng, X. Cui, and Y. Zhang, Plasma Sci. Technol., 17, 216 (2015). https://doi.org/10.1088/1009-0630/17/3/08
  8. Y. F. Zhang, F. Zhang, Q. J. Gao, D. P. Yu, X. F. Peng, and Z. D. Lin, Chinese Phys. Lett., 18, 286 (2001). https://doi.org/10.1088/0256-307X/18/2/345
  9. K. Benzhour, J. Szatkowski, F. Rozp och, and K. Stec, l′ Acta Physica Polonica A, 118, 447 (2010). https://doi.org/10.12693/APhysPolA.118.447
  10. H. Nagasaka, Y. Teranishi, and Y. Kondo, E-j. Surf. Sci. Nanotechnol., 14, 53 (2016). https://doi.org/10.1380/ejssnt.2016.53
  11. Z. M. Yu, W. A. N. G. Jian, Q. P. Wei, L. C. Meng, S. M. Hao, and L. O. N. G. Fen, Trans. Nonferrous Met. Soc. China, 23, 1334 (2013). https://doi.org/10.1016/S1003-6326(13)62601-1
  12. N. G. Ferreira, E. Abramof, E. J. Corat, N. F. Leite, and V. J. Trava-Airoldi, Diam. Relat. Mater., 10, 750 (2001). https://doi.org/10.1016/S0925-9635(00)00522-7
  13. T. A. Enache, A. M. Chiorcea-Paquim, O. Fatibello- Filho, and A. M. Oliveira-Brett, Electrochem. Commun., 11, 1342 (2009). https://doi.org/10.1016/j.elecom.2009.04.017
  14. R. Ramamurti, M. Becker, T. Schuelke, T. Grotjohn, D. Reinhard, G. Swain, and J. Asmussen, Diam. Relat. Mater., 17, 481 (2008). https://doi.org/10.1016/j.diamond.2007.08.042
  15. A. Tallaire, C. Rond, F. Bénédic, O. Brinza, J. Achard, F. Silva, and A. Gicquel, Phys. Status Solidi A, 208, 2028 (2011). https://doi.org/10.1002/pssa.201100017
  16. P. W. May, Philos. Trans. R. Soc. Lond. A, 358, 473 (2000). https://doi.org/10.1098/rsta.2000.0542