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Trend and Issues of van der Waals 2D Semiconductor Devices

반데르발스 2차원 반도체소자의 응용과 이슈

  • 임성일 (반데르발스 물질연구센터)
  • Published : 2018.06.30

Abstract

wo dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano-electronics and -optoelectronics. This review mainly focuses on the features and applications of state-of-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. In a closing remark, important remaining issues of 2D vdW devices are also introduced as requests for future electronics and photonics applications.

Keywords

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