Abstract
We fabricated an anode-type ion source driven by a charge repulsion mechanism and investigated its beam shape controlled by a Whenelt mask integrated at the front face of the source. The ion beam shape was observed to vary by changing the geometry of the Whenelt mask. As the angle of inclination of the Whenelt mask was varied from $40^{\circ}$ to $60^{\circ}$, the etched area at a thin film was reduced from 20 mm to 7.5 mm at the working distance of 286 mm, and the light transmittance through the etched surface was increased from 78% to 80%, respectively. In addition, for the step height difference, ${\Delta}$ between the inner mask and the outer mask of ${\Delta}=0$, -1 mm, and +1 mm, we observed the ion beam shape was formed to be collimated, diverged, and focused, respectively. The focal length of the focused beam was 269 mm. We approved experimentally a simple way of controlling the electric field of the ion beam by changing the geometry of the Whenelt mask such that the initial direction of the ion beam in the plasma region was manipulated effectively.