Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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A study on the growth of 3 inch grade AlN crystal

직경 3인치의 AlN 단결정 성장에 관한 연구

  • Kang, Seung-Min (Design-Engineering Convergence Department, International Graduate School of Design Convergence, Hanseo University)
  • 강승민 (한서대학교 국제디자인융합전문대학원 디자인공학융합학과)
  • Received : 2019.06.10
  • Accepted : 2019.06.17
  • Published : 2019.06.30
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Abstract

AlN (Aluminum Nitride) crystal which could be used to substrates for UV LEDs was grown by PVT ((Physical Vapor Transport) method. 3 inch AlN single crystal with a thickenss of 4 mm was grown using Polycrystalline seed for 120 hours. In this report, a result of 3 inch polycrystalline bulk AlN growth behavior using large size crucible and growth condition were reported.

자외선 LED용 기판소재로 응용가능한 AlN(질화알루미늄) 단결정을 물리기상이동법(Physical Vapor Transport Method)으로 성장하기 위해 성장 거동을 조사하였다. 다결정의 종자결정을 사용하였으며, 직경은 3인치급이었고, 120시간 동안 성장공정을 수행하여 길이 약 4 mm의 다결정상을 얻었다. 본 연구에서는 성장 조건과 대형의 도가니를 사용하였을 경우의 성장 거동에 대하여 고찰하여 보고자 하였다.

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References

  1. B.T. Tran, N. Maeda, M. Jo, D. Inoue, T. Kikitsu and H. Hirayama, "Performance improvement of AlN crystal quality grown on patterned Si(111) substrate for deep UV-LED applications", Sci. Rep. 6 (2016) 35681. https://doi.org/10.1038/srep35681
  2. Yu. N. Makarov, D.P. Litvin, A.V. Vasiliev, A.S. Sega, S.S. Nagalyuk, H. Helava, M.I. Voronova and K.D. Scherbachov, "3" 6H SiC wafers production for III-N epitaxy", Proc. 7th Conf. Nitrides of Gallium, Indium and Aluminum (2010) 23.
  3. S.M. Kang, "The study on the formation of growth steps in the sublimation growth of SiC single crystals", J. Korean Cryst. Growth Cryst. Technol. 11 (2001) 1.
  4. S.M. Kang, "Growth of AlN crystals by the sublimation process", J. Korean Cryst. Growth Cryst. Technol. 18 (2008) 68.
  5. G.P. Yin and S.M. Kang, "Dependance of hot-zone position on AlN single crystal growth by PVT method", J. Korean Cryst. Growth Cryst. Technol. 26 (2016) 84. https://doi.org/10.6111/JKCGCT.2016.26.2.084
  6. G.P. Yin and S.M. Kang, "A study on the AlN crystal growth using its thin films grown on SiC substrate", J. Korean Cryst. Growth Cryst. Technol. 28 (2018) 170. https://doi.org/10.6111/JKCGCT.2018.28.4.170