Nuclear Engineering and Technology

Korean Nuclear Society (한국원자력학회)
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A novel approach in voltage transient technique for the measurement of electron mobility and mobility-lifetime product in CdZnTe detectors

  • Yucel, H. (Ankara University, Institute of Nuclear Sciences) ;
  • Birgul, O. (Ankara University, Faculty of Engineering, Dept. of Biomedical Engineering) ;
  • Uyar, E. (Ankara University, Institute of Nuclear Sciences) ;
  • Cubukcu, S. (Ankara University, Faculty of Engineering, Dept. of Physics Engineering)
  • Received : 2018.05.14
  • Accepted : 2018.12.29
  • Published : 2019.04.25
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Abstract

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

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References

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