Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of Si Doping in Self-Assembled InAs Quantum Dots on Infrared Photodetector Properties

Si 도핑이 InAs 자기조립 양자점 적외선 소자 특성에 미치는 효과

  • Seo, Dong-Bum (Department of Materials Science & Engineering, Chungnam National University) ;
  • Hwang, Je-hwan (Division of Convergence Technology, Korea Research Institute of Standard Science) ;
  • Oh, Boram (Division of Convergence Technology, Korea Research Institute of Standard Science) ;
  • Kim, Jun Oh (Division of Convergence Technology, Korea Research Institute of Standard Science) ;
  • Lee, Sang Jun (Division of Convergence Technology, Korea Research Institute of Standard Science) ;
  • Kim, Eui-Tae (Department of Materials Science & Engineering, Chungnam National University)
  • 서동범 (충남대학교 공과대학 신소재공학과) ;
  • 황제환 (한국표준과학연구원 융합물성측정센터) ;
  • 오보람 (한국표준과학연구원 융합물성측정센터) ;
  • 김준오 (한국표준과학연구원 융합물성측정센터) ;
  • 이상준 (한국표준과학연구원 융합물성측정센터) ;
  • 김의태 (충남대학교 공과대학 신소재공학과)
  • Received : 2019.06.17
  • Accepted : 2019.08.19
  • Published : 2019.09.27
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Abstract

We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.

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References

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